China Made the Resolute Decision to Heavily Invest in Memory in 2014

@向小田: China made the resolute decision to heavily invest in memory in 2014.

Around 2016, the nation planned for three major national-level memory projects to be centrally established and constructed.

These included Yangtze Memory Technologies (NAND) in Wuhan;

Changxin (DRAM) in Hefei, and Jinhua (DRAM) in Fujian.

In 2019, Yangtze Memory achieved mass production of 64-layer 3D NAND, and Changxin achieved mass production of 19nm DRAM, marking the official entry of domestic memory into the market.

From its first to third phase, Yangtze Memory will have accumulated over 200 billion yuan in investment by 2025, breaking into the top three globally for NAND.

Changxin has accumulated over 150 billion yuan in investment and is currently focusing on developing DRAM below 18nm and HBM3.

Then, it perfectly coincided with the major cyclical upswing in the global memory industry for 2025/2026/2027.

Ten years of strategic layout, culminating in success. Such forward-looking industrial policy can be said to be on par with South Korea's strategic layout in memory.

What is a national strategy and industrial policy? This is the most typical example.